| PART |
Description |
Maker |
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2SA1129 2SA1129-S 2SA1129-Z 2SA1129-AZ |
7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB MP-25, 3 PIN
From old datasheet system
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Silicon transistor
|
Panasonic Semiconductor
NEC
|
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| 2SB1431 |
Silicon power transistor
From old datasheet system
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
| 2SB1432 |
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC
|
| 2SB736 2SB736A 2SB736-T1B 2SB736A-T1B 2SB736ABW3-T |
BJT 双极型晶体管
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)
Silicon transistor
|
NEC, Corp.
NEC[NEC]
|
| 2SA1221 2SA1222 2SA1222-T 2SA1221-T 2SA1222K |
BJT
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
